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The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

Commencing, March 2018 there is a job opening in the electron microscopy at the IKZ

Post-doctoral researcher (m/f)

Electron microscopic characterization of scintillating ▀-Ga2O3-crystals

Job description:
Leibniz Institute for Crystal Growth has excellent expertise and facilities for the characterization of semiconductor materials. Among them is an aberration corrected TEM, an SEM equipped with a cathodoluminescence system and a computer cluster for performing TEM/STEM image - and molecular dynamical simulations. In the frame of a joint Polish-German project between Leibniz Institute for Crystal Growth and Nikolaus-Kopernikus-University Torun, financed by DFG and NCN, scintillating single crystalline ▀-Ga2O3 activated with cerium will be grown and characterized. Nowadays, inorganic crystalline scintillators dominate in the field of high-energy radiation detectors, including nuclear medicine (Positron Emission Tomography), high energy physics, astrophysics. ▀-Ga2O3 is a wide bandgap semiconductor (4.85 eV) that combines transparency in the whole visible and deep UV spectral range with semiconducting properties. This may boost new concepts for scintillator devices having a higher level of integration. The main goal of the present study includes fundamental study of structural, electrical, optical, scintillating and thermoluminescent properties of semiconducting ▀-Ga2O3 activated with cerium, as the basis for future device development, utilizing this class of materials. Main tools will be high resolution transmission electron microscopy and cathodoluminescence.

Qualifications:
Applicants should hold a Diploma or an MSc degree in physics, crystallography, materials science or a related discipline with a strong experimental background. Excellent knowledge of basic physics and of solid state physics are necessary. Expertise in aberration corrected high resolution transmission microscopy, scanning transmission electron microscopy, cathodoluminescence and image simulation as well as in ▀-Ga2O3 characterization are necessary for immediate start of the project. We are looking for a scientist with a high level of communication skills and the assertiveness to work in a highly motivated team of researchers and technicians.

The position is available from March 2018 and its duration is limited to 3 years. Payment is according to TV÷D (collective labour agreement for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants, preference will be given to disabled candidates.
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For information about the project contact:
Dr. Zbigniew Galazka, zbigniew.galazka@ikz-berlin.de,
Tel.: +49-(0)30 6392 3020

We await your informative application with reference to the job number 02/18, including the usual documents, by January 31th, 2018. Please send them to Mrs. Ruthenberg: personal@ikz-berlin.de

Closing date: 31.01.2018
Closing date: 31 January 2018 Published on academics.com on date 11 January 2018
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