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Payment, depending on qualification up to 13 TV-H
(PART-TIME, UP TO 75 %)
(Ref. Nr. A 17/055) The position is in accordance with German regulations (Wissenschaftszeitvertragsgesetz) for a period of 3 years with the option for one year extension. It is intended to enable the successful candidate to obtain a doctorate degree in a cooperative doctorate procedure between the THM, University of Applied Sciences and the Universitat Rovira i Virgili (Spain). The project in the research field microelectronics is in the area of simulation and modelling of nanowire transistors structures of emerging technologies. The research focuses on the development of analytical, physicsbased compact models for a numerically efficient circuit simulation, especially in consideration of threedimensional effects. For verification by measurements we are in close collaboration with several European research groups. In addition, participation in teaching and general tasks of the group is expected. Requirements for the position:
- Master’s comparable degree in Electrical Engineering or Physics
- Experience in finite element simulation of semiconductor devices
- Excellent theoretical knowledge and practical expertise in the field of solid-state electronics or physics.
- Good English language skills necessary, basic German language skills are desirable