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Head of InP Devices Lab
The InP Devices Lab is responsible for the processing and the device development of the InP-based components at FBH. In an industry-compatible
cleanroom environment we run an InP-HBT Transferred-Substrate process for the frequency range beyond 100 GHz. Presently, we achieve transit
frequencies around 450 GHz, integrated circuits up to 330 GHz have been demonstrated. Furthermore, in cooperation with the Leibniz institute
IHP an InP-on-BiCMOS version of the process was established that is available also to external partners.
Your work as head of the InP Devices Lab includes primarily the following tasks:
- Provide technical and conceptual guidance for the ongoing activities and the further developments, with the aim to reach 1 THz with the InP technology
- Acquire and run research projects funded by national and international agencies (BMBF, EC, etc.)
- Coordinate the work within the Lab, motivate and guide your team, which includes about 5 staff members
Mrs. Nadine Möller (email: email@example.com)
Gustav-Kirchhoff-Straße 4, 12489 Berlin