Scientific Member of Staff / PhD student (m/f/d) GaN high-voltage transistors

The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is an application-oriented research institute in the fields of high-frequency electronics, photonics and quantum physics. It researches electronic and optical components, modules and systems based on compound semiconductors. These devices are key enablers that address the needs of today’s society in fields like communications, energy, health, and mobility. It covers the entire value chain from design to ready-for-delivery systems.

In the Wide-Bandgap Electronics Department we are looking for a research staff member / PhD Student for novel designs of GaN-based high-voltage switching transistors.

Reference number 06/23

Your activities

You design and realize advanced GaN-based high-voltage switching transistors to extend their voltage rating and current density and to improve their switching characteristics. For this, new technology modules in semiconductor front-end processing have to be developed. You will process the GaN devices in the FBH cleanrooms and perform the electrical device characterization. The experimental work is backed by TCAD device simulations. You will have strong interaction with our groups for GaN epitaxy and front-end processing. You publish the results in scientific papers and use them for your PhD thesis.

Your profile

Candidates must have successfully completed their university education (master’s degree, diploma) in electrical engineering, physics, or in a related discipline. You have a good background in semiconductor technology and in power electronics. Practical experience in semiconductor device processing is of advantage. You feel challenged by an interdisciplinary research topic covering power electronics, semiconductor device design and material technology. You enjoy working in laboratory and cleanroom environments. Teamwork and independent work as well as good knowledge of the English language, both spoken and written, are required. German language skills are helpful.

Our offer

We offer challenging and interdisciplinary work on innovative power-electronic semiconductor devices. Employment, remuneration and social benefits are based on the collective agreement for the public sector (TVöD Bund). The position can be filled immediately and is initially limited to two years.

FBH is an equal-opportunity employer and actively supports the compatibility of family and career. Particular attention is paid to gender equality. The Institute strives to increase the proportion of women in this area. Female candidates are encouraged to apply. Among equally qualified applicants, preference will be given to handicapped candidates.

Have we piqued your interest? Then we look forward to your online application. Please click on "Apply online" and submit your complete application documents not later than 01.03.2023.

If you have any questions about the application, please contact Mrs. Nadine Kelm
Tel.: +49 30 6392 2691, email Nadine.Kelm@fbh-berlin.de