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Head (f/m) of InP Devices Lab
Published(972 days ago)
Deadline for applications(940 days ago)
Ferdinand Braun Institute, Leibniz-Institut für Höchstfrequenztechnik (FBH)Berlin
The Ferdinand Braun Institute, Leibniz-Institut für Höchstfrequenztechnik (FBH) within the Forschungsverbund Berlin e.V.
is an internationally leading research institute on microwave and mm-wave devices, diode lasers and LEDs. Based on III/V semiconductors,
it researches and fabricates components and systems for applications in communications, traffic and production technology, medicine and
biotechnology. Its capabilities encompass the entire value chain from design to ready-for-delivery systems. For more details, visit:
For our activities on developing and fabricating mm-wave and sub-THz transistors and MMICs with InP heterobipolar transistors, we are looking for the
Head of InP Devices Lab (Reference 06/17)
The InP Devices Lab is responsible for the processing and the device development of the InP-based components at FBH. In an industry-compatible
cleanroom environment we run an InP-HBT Transferred-Substrate process for the frequency range beyond 100 GHz. Presently, we achieve transit
frequencies around 450 GHz, integrated circuits up to 330 GHz have been demonstrated. Furthermore, in cooperation with the Leibniz institute
IHP an InP-on-BiCMOS version of the process was established that is available also to external partners.
Your work as head of the InP Devices Lab includes primarily the following tasks:
Provide technical and conceptual guidance for the ongoing activities and the further developments, with the aim to reach 1 THz with the InP technology
Acquire and run research projects funded by national and international agencies (BMBF, EC, etc.)
Coordinate the work within the Lab, motivate and guide your team, which includes about 5 staff members
The successful applicant should hold a Master or Diploma degree and a PhD in electrical engineering, physics or related disciplines. We expect
comprehensive knowledge and experience in the technology of III-V semiconductor devices and a high-level scientific profile. Special knowledge
in the field of InP bipolar transistors and/or mm-wave devices is desirable.
You should be a good team player with the necessary soft skills to promote work in your Lab as well as co-operation with other groups in the
multi-disciplinary team at FBH. A good command of the English language is required as well.
The position is available from now on and is initially limited to 2 years, but with the clear option for a subsequent permanent contract,
according to the importance of the position. Payment is according to the German TVöD (Bund) scheme. There are equal opportunities for
female and male applicants. Qualified female candidates are therefore particularly encouraged to apply. Disabled applicants with adequate
qualification will be preferentially considered.
Please send your complete application documents to the FBH by 31 July, 2017, indicating the corresponding job number.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Mrs. Nadine Möller (email:email@example.com) Gustav-Kirchhoff-Straße 4, 12489 Berlin
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